Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices

Journal Article · Fri Sep 09 00:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2062940· OSTI ID:20719277

Senzaki, Yoshihide; Choi, Kisik; Kirsch, Paul D; Majhi, Prashant; Lee, Byoung Hun ^[1]

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1. SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States)

High-k gate stack fabrication via atomic layer deposition (ALD) of ultra thin HfO2 and HfxSi1-xO2 films is demonstrated utilizing metal-amide precursors and ozone as an oxidant. High resolution transmission electron microscopy (TEM) shows that films near 2.0 nm are reproducible. X-ray reflectivity (XRR) and Rutherford backscattering (RBS) indicate that this ALD chemistry proceeds similarly on multiple surface preparations including HF last without growth incubation. High field mobility of more than 85% of the universal SiO2 mobility has been achieved at EOT {approx}1nm with a reduction of more than two orders of magnitude in leakage current density as compared with a SiO2/poly Si gate. Various ALD metal nitrides such as TiN, HfN, HfSiN have been deposited on HfO2 and HfSiOx dielectrics which enabled a study of the interfacial reaction between high-k dielectrics and metal electrode materials. The thermal stability of PVD Ru deposited on ALD HfO2 has also been observed.

• OSTI ID: 20719277
• Journal Information: AIP Conference Proceedings, Vol. 788, Issue 1; Conference: 2005 international conference on characterization and metrology for ULSI technology, Richardson, TX (United States), 15-18 Mar 2005; Other Information: DOI: 10.1063/1.2062940; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
EPITAXY
HAFNIUM NITRIDES
INTEGRATED CIRCUITS
LAYERS
LEAKAGE CURRENT
MOBILITY
OXIDIZERS
PHYSICAL VAPOR DEPOSITION
PRECURSOR
REFLECTION
REFLECTIVITY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON NITRIDES
SILICON OXIDES
THIN FILMS
TITANIUM NITRIDES
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION