Impact of boron on the step-free area formation on Si(111) mesa structures

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4939160· OSTI ID:22493109

Osten, H. J.; Fissel, A. ^[1]

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1. Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover (Germany)

We report about the influence of boron (B) on surface morphology of Si layers grown by molecular beam epitaxy on Si(111) mesas. Dimension of step-free mesa areas is reduced in comparison to pristine Si and scales with the B-coverage. This can be explained by a reduced mass transport on the Si surface in the presence of B-induced √3 × √3 surface structure which is due to a reduced Si equilibrium free adatom density. We demonstrate that a suitable combination of initial B coverage and Si layer thickness results in large step free areas and B doping concentration up to 4 × 10{sup 18 }cm{sup −3}.

• OSTI ID: 22493109
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
BORON
CRYSTAL DOPING
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SILICON
SURFACES
THICKNESS