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Title: Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Abstract

We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

Authors:
; ;  [1];  [1]
  1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22490713
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIFFUSION LENGTH; DISTRIBUTION; ELECTRIC POTENTIAL; GALLIUM; HOLES; ILLUMINANCE; INDIUM; POTENTIALS; STRESSES; THIN FILMS; TRANSISTORS; ZINC OXIDES

Citation Formats

Um, Jae Gwang, Mativenga, Mallory, Jang, Jin, Migliorato, Piero, and Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors. United States: N. p., 2015. Web. doi:10.1063/1.4922714.
Um, Jae Gwang, Mativenga, Mallory, Jang, Jin, Migliorato, Piero, & Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors. United States. https://doi.org/10.1063/1.4922714
Um, Jae Gwang, Mativenga, Mallory, Jang, Jin, Migliorato, Piero, and Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA. 2015. "Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors". United States. https://doi.org/10.1063/1.4922714.
@article{osti_22490713,
title = {Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors},
author = {Um, Jae Gwang and Mativenga, Mallory and Jang, Jin and Migliorato, Piero and Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA},
abstractNote = {We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.},
doi = {10.1063/1.4922714},
url = {https://www.osti.gov/biblio/22490713}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 23,
volume = 117,
place = {United States},
year = {Sun Jun 21 00:00:00 EDT 2015},
month = {Sun Jun 21 00:00:00 EDT 2015}
}