Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film
It is found that the oxygen vacancy (V{sub O}) defect concentration affecting the separation between individual species in Li{sub Zn}-Li{sub i} complex influences the optical emission property of Li{sub 0.06}Zn{sub 0.94}O epitaxial thin film grown by pulsed laser deposition. The film grown under low oxygen partial pressure (n-type conductivity)/higher partial pressure (resistive-type) has broad emission at ∼2.99 eV/∼2.1 eV and a narrower emission at 3.63 eV/3.56 eV, respectively. First principle based mBJLDA electronic structure calculation suggests that the emission at 2.99 eV is due to the Li{sub Zn}-Li{sub i} pair complex and the emission at 2.1 eV is when the component species are away from each other.
- OSTI ID:
- 22283223
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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