Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568 (Japan)
- Toshiba Corporation, Kawasaki 212-8582 (Japan)
- Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan)
- Department of Communication Engineering and Informatics, University of Electro-Communication, Chofu 182-8585 (Japan)
- WPI-AIMR, Tohoku University, Sendai 980-8577 (Japan)
Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.
- OSTI ID:
- 22273653
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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