Graphene nanoribbon superlattices fabricated via He ion lithography

Journal Article · Mon May 12 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4878407· OSTI ID:22273394

Fragneaud, Benjamin ^[1]; Gustavo Cançado, Luiz ^[1]; Winston, Donald ^[2]; Miao, Feng ^[2]; Alberto Achete, Carlos ^[1]; Medeiros-Ribeiro, Gilberto ^[3]

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1. Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil)
2. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States)
3. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil)

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

• OSTI ID: 22273394
• Journal Information: Applied Physics Letters, Vol. 104, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALLOGRAPHY
GALLIUM IONS
GRAPHENE
GRATINGS
HELIUM IONS
NANOSTRUCTURES
POINT DEFECTS
RAMAN SPECTROSCOPY