The relation of magnetic properties and anomalous Hall behaviors in Mn4N (200) epitaxial films
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, 510275 (China)
Highlights: • Ferrimagnetic Mn4N(200) were grown on MgO(100) by plasma assisted molecular beam epitaxy. • We elucidate the relation of nitrogen vacancies and the magnetism by adjusting the growth pressure. • We state the relation of longitudinal resistivity and temperature as ρ{sub xx}∝T{sup 1.9994} (T ≤ 86K) and ρ{sub xx}∝T{sup 0.3068} (T > 86K) by data fitting. • We introduce a method to estimate the Debye temperature of Mn{sub 4}N materials and the residual resistance of 0 K. • We verify the linear relation between anomalou Hall resistivity (ρ{sub AH}) and magnetization at low magnetic field. - Abstract: The Mn{sub 4}N(200) films were grown on MgO(100) substrates by molecular beam epitaxy. The saturated magnetizations are 0.735 μB/f.u. and 0.892 μB/f.u. under pressure of 7.5 × 10{sup −6} mbar–9.5 × 10{sup −6} mbar. Increasing of growth pressure enhances the magnetism of Mn{sub 4}N due to the reduction of nitrogen vacancies. Debye temperature (T{sub D}) of Mn{sub 4}N is estimated to be 86 K. The longitudinal resistivity is linear to T{sup 1.9994} when T D, which coincides with electron-electron scattering of ferromagnetic coupling. The longitudinal resistivity originates from electron-electron scattering below T{sub D} since electron-phonon scattering is frozen. The longitudinal resistivity at 0 K is about 10% lower than 5 K as 7.085 μΩ cm. Mn{sub 4}N films show obvious anomalous Hall Effect in perpendicular magnetic fields. The anomalous Hall resistivity (ρ{sub AH}) of Mn{sub 4}N film is obtained by subtracting the ordinary Hall resistivity from transverse resistivity. The ρ{sub AH} is verified to be linear to magnetization at low magnetic field strength region (0–9 KOe).
- OSTI ID:
- 22803965
- Journal Information:
- Materials Research Bulletin, Vol. 101; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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