Conducting grain boundaries in the high-dielectric-constant ceramic CaCu{sub 3}Ti{sub 4}O{sub 12}
Journal Article
·
· Journal of Applied Physics
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
To clarify the electrical property of grain boundaries, the fine-grained ceramics CaCu{sub 3}Ti{sub 4}O{sub 12} have been treated with the hydrofluoric acid to remove the parts of grain boundaries. The dielectric response difference between the etched samples and the pristine ones indicates that the ceramic CaCu{sub 3}Ti{sub 4}O{sub 12} consists of insulating or semiconducting grains with conducting grain boundaries. Therefore, the giant dielectric phenomenon is supposed not to derive from the grain boundary barrier layer capacitance effect. The possible mechanism is discussed.
- OSTI ID:
- 20982804
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 7; Other Information: DOI: 10.1063/1.2713943; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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